… to improve amplifiers’ power gain for a close to … FD-SOI CMOS amplifier presents a power
gain of 7.6 dB, a bandwidth of 20 GHz, a Psat of -3.7 dBm and a peak PAE of 4.2 % for a power …

… power design. The unique feature of FD-SOI provides another degree of freedom in circuit
design, which enabled the designers to optimize their circuit in the desired operating region. …

… power gain for the complete PA is shown in Fig. 10. The gain is normalized to a simulated
small signal power gain of … Figure 11 shows the total power in the two IM3 tones, both with …

… They achieve excellent output power, gain, and linearity but limited … power consumption if
SoC implementation is desired [8]. In this work, 22 nm fully depleted silicon-on-insulator (FDSOI…

… at different RF power levels, as well as the ratio between output power at P1dB and the DC
… power cell flexibility to trade power gain and consumption for linearity, between “High Gain …

… The benefits of FDSOI technology for low power Logic and RF performance have been …
oxide (EG) FDSOI transistors is shown in table I. The EG-FETs are built on SOI and the higher …

… extrapolation to unity of the H21 (short circuit current-gain) and the U (Mason’s gain or
unilateral power gain), respectively. The extrapolation uses a −20 dB/dec slope, which …

… features of planar FDSOI devices vs planar bulk and 3D FinFETs for ultra-low power and
IoT (Internet of Things) applications. The interest of using back-bias, the specific FDSOI device/…

… receiver in a 28-nm fully depleted (FD) silicon-oninsulator (SOI) CMOS technology. The
amplifier operates at 1-V power supply and provides a wide linear-in-dB gain range (about 30 dB…

… FD-SOI … power by up to 55% compared with 28nm FD-SOI at the same frequency. GF has
tested 22FDX designs down to 0.3V operation, although it has determined the minimum power …