In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide
state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …

This paper reports the design and performance of two new GaN MMIC amplifiers operating
at F-band frequencies. The first design produces 28-29 dBm from 102 to 118 GHz, while the …

This paper reports the design and performance of state-of-the-art GaN MMICs and a fully
packaged Ka-band SSPA. Incorporating harmonic tuning, the MMICs produce power levels …

This paper reports the first broadband, high-power solid-state power amplifier operating at W-
band (75–110 GHz) frequencies. Utilizing a new broadband GaN MMIC chip, we report a …

GaN MMIC power amplifiers for X-band applications are presented delivering more than 16
W of W output power while being extremely small in chip size. With a single-device amplifier …

We present an initial demonstration of GaN-based broad-band power amplifiers in the form
of a flip-chip integrated circuit (FC-IC) with AlN as the circuit substrates. The input matching …

This paper presents a performance evaluation of GaN X-Band power amplifiers operating as
self-synchronous rectifiers. Two single-stage MMIC power amplifiers are characterized …

This paper presents the design and measurement of a 2-20 GHz GaN MMIC power amplifier
fabricated on 100 μm silicon carbide using Qorvo's QGaN15 released process. A 2-stage …

In this paper, we describe the design of the first reported full W-band (75–110 GHz) power
amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride …

We report a new 70-105 GHz wideband GaN power amplifier which can enable the next
generation of E and W-band transmitter modules. Two versions of the amplifier are …