Semiconductor laser amplifiers are investigated with respect to amplified spontaneous
emission power and gain characteristics. The influence of the spontaneous emission …

The analysis presented provides a quantitative method for predicting semiconductor laser
amplifier performance in the presence of ASE (amplified spontaneous emission). It indicates …

We present results of a new model of semiconductor laser amplifiers which differs from
previous analyses in that it includes the spectral dependence of material gain and …

A new analytical model for semiconductor laser amplifiers is presented. It has the virtue of
avoiding excessive numerical computation and yet retaining sufficient accuracy for most …

Long-wavelength semiconductor laser amplifiers are investigated with respect to spectral
gain properties such as peak gain wavelength shift and width of gain curve, employing …

The spatial dependence of the material gain is introduced in the model of a semiconductor
optical amplifier. Analytical expressions of the profiles of the carrier density, spontaneous …

Spectral line broadening in semiconductor lasers is studied experimentally through the gain
saturation characteristics of 1.5 μm InGaAsP traveling‐wave laser amplifiers. Wide signal …

An equivalent circuit model for a semiconductor laser amplifier (SLA) has been developed.
This model can be used with a transfer matrix method (TMM) to analyze the performance of …

Wavelength conversion due to gain saturation in a travelling wave semiconductor laser
amplifier is analyzed using a small-signal model. An analytic expression is developed …

A numerical model for flared semiconductor optical amplifiers that incorporates the effects of
gain and index saturation and thermal effects is presented. Theoretical near fields, far fields …