Soft errors have been a concern in memories for many years. In older technologies, soft
errors typically affected a single memory cell but as technology scaled, Multiple Cell Upsets …

Soft errors have been a concern in memory reliability for many years. With device feature
size decreasing and memories density increasing, a single event upset (SEU) in memory …

As multiple cell upsets (MCUs) become more frequent on SRAM memory devices, there is a
growing interest on error correction codes that can correct multibit errors. Orthogonal Latin …

Error correction codes (ECCs) are commonly used to protect memories against errors.
Among ECCs, orthogonal latin squares (OLS) codes have gained renewed interest for …

Soft errors are an important issue for circuit reliability. To mitigate their effects on the system
functionality, different techniques are used. In many cases Error Correcting Codes (ECC) are …

Scaling of CMOS technology to nanoscale increases soft error rate in memory cells. Both
single bit upset and Multiple Cell Upsets (MCUs) causes reliability issues in memory …

For perfect communication during data transmission between transmitter and receiver the
reliability is important factor, sometimes reliability is missed due to appearance of errors …

Error correction codes (ECCs) are commonly used in computer systems to protect
information from errors. For example, single error correction (SEC) codes are frequently …

As CMOS technology size scales down, multiple cell upsets (MCUs) caused by a single
radiation particle have become one of the most challenging reliability issues for memories …

As semiconductor devices scale into deep sub-micron regime, the reliability issue due to
radiation-induced soft errors increases in on-chip memory systems. Neutron-induced soft …