This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm
CMOS technology for D-band applications. Two-way transformer-based power-combining is …

This paper presents a high-efficiency, linear power amplifier (PA) for 28GHz mobile
communications in 40nm CMOS technology. The design and layout are optimized for high …

This paper presents a 60-GHz CMOS balanced power amplifier (PA) with miniaturized
quadrature hybrids using 90-nm CMOS technology. To improve the output power and …

We present a two-way current combining power amplifier (PA) for 28GHz wireless
communication. To boost the saturated output power (P SAT) and maintain a high power …

A three-stage stacked FET CMOS power amplifier (PA) for the 12.7 to 15.3 GHz frequency
range is presented. The PA achieves more than 30 dB linear gain with saturated output …

A 60 GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
The PA consists of two unit PAs with a transformer-based power combiner at the output. To …

Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …

In this paper, a transformer (TF)-based two-stage dual-radial power splitting/combining
architecture with advantages of in-phase RF power splitting/combining scheme, compact …

This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented
in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high …

A 97–107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a
triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series …