This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …

This letter presents two highly efficient two-stage power amplifiers (PAs) for 5G applications,
implemented in a 22-nm slilicon on insulator (SOI) CMOS technology. High efficiency is …

This paper presents a reconfigurable multimode multiband power amplifier (MMPA)
integrated in a 130nm SOI CMOS technology. In 2G mode, a saturated output power of …

This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …

In order to efficiently utilize the frequency band above 200GHz for radar and communication
applications, enough transmitted output power is essential to overcome the elevated path …

This paper presents a Ka-band neutralized medium power amplifier (PA). The two-stage
single-path PA adopts the neutralizing capacitors to increase the stability and three types of …

This paper presents a compact high output power, linear power amplifier (PA) for array
based small to medium range mm-Wave base stations. Transformer based matching and …

This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm
bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM …

One of the remaining challenges in implementing CMOS 60GHz radios is to cover longer
communication distance as the high path loss at mm-Wave frequencies demands higher …

This paper presents a fully integrated linear power amplifier (PA) in a 65-nm CMOS process
for mm-wave 5G applications. The proposed linear PA employs a compact symmetrical 4 …