Design and optimization of 65nm CMOS passive devices which are used in the
implementation of a 60GHz Power Amplifier (PA) are presented. The targeted application is …

This article presents a 28-GHz power amplifier (PA) suitable for fifth-generation (5G)
wireless systems. Designed in a 65-nm bulk CMOS, the PA achieves a saturated output …

This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems,
designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation …

This paper presents the design and measurement results of a fully integrated 130 nm CMOS
multimode power amplifier (PA). The proposed PA can save power consumption by …

A stacked amplifier architecture has been used to achieve high RF output power levels in
sub-100nm CMOS. The stacking makes it possible to both operate the power amplifier (PA) …

This paper presents a mixed-signal power amplifier (PA) with real-time hybrid Class-G and
dynamic load trajectory manipulation (DLTM) operation that achieves PA efficiency …

This paper presents a single-stage stacked Class AB power amplifier (PA) with lower
complexity for fifth-generation (5G) K/K a band front-ends that has been realized in a 45 nm …

A 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power (LP)
CMOS technology. The structure consists of four common-source pseudo-differential stages …

This paper presents a 3-stage differential cascode power amplifier (PA) for 109–137 GHz
applications. At 120 GHz the circuit delivers 16.5 dBm saturated output power with 12.8 …

A single stage, millimeter-wave 2-stack FET power amplifier operates with a peak saturated
power of 18.2 dBm and peak PAE of 48.2%. The high PAE results from a proposed Cgd …