32.8 A 27.8-to-38.7 GHz Load-Modulated Balanced Power Amplifier with Scalable 7-to-1 Load-Modulated Power-Combine Network Achieving 27.2 dBm Output …
W Zhu, J Ying, L Chen, J Zhang, G Lv… - … Solid-State Circuits …, 2024 - ieeexplore.ieee.org
The increasing global demand for multi-Gb/s data-rates has accelerated the rapid
development and standardization of the 5G technology, particularly in the mm-wave bands …
development and standardization of the 5G technology, particularly in the mm-wave bands …
A Ka-band stacked power amplifier with 24.8-dBm output power and 24.3% PAE in 65-nm CMOS technology
Y Chang, BZ Lu, Y Wang… - 2019 IEEE MTT-S …, 2019 - ieeexplore.ieee.org
This paper presents a fully integrated one-stage three-stack Ka-band power amplifier (PA)
with neutralization technique in 65-nm CMOS process for 5G applications. A transformer …
with neutralization technique in 65-nm CMOS process for 5G applications. A transformer …
A 42–46.4% PAE continuous class-F power amplifier with Cgd neutralization at 26–34 GHz in 65 nm CMOS for 5G applications
This paper presents a wideband high efficiency continuous class-F (CCF) power amplifier
(PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic …
(PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic …
A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS
SY Mortazavi, KJ Koh - 2015 IEEE Radio Frequency Integrated …, 2015 - ieeexplore.ieee.org
This paper presents a 38 GHz 2-stage harmonic-tuned power amplifier consisted of a class-
F-1 output power amplifier proceeded by a class-AB driving stage in 0.13 μm SiGe BiCMOS …
F-1 output power amplifier proceeded by a class-AB driving stage in 0.13 μm SiGe BiCMOS …
94GHz power-combining power amplifier with+ 13dBm saturated output power in 65nm CMOS
D Sandström, B Martineau, M Varonen… - 2011 IEEE Radio …, 2011 - ieeexplore.ieee.org
A power combining power amplifier utilizing cascode topology and transformer-based
matching elements is presented in this paper. The amplifier achieves+ 13 dBm saturated …
matching elements is presented in this paper. The amplifier achieves+ 13 dBm saturated …
A 39-GHz phase-inverting variable gain power amplifier in 65-nm CMOS for 5G communication
X Zhang, X Niu, Q Chen, X Chen… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a 39-GHz phase-inverting variable gain power amplifier (VGPA) for 5G
communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the …
communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the …
A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13- Technology
Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and
transmitting antennas, contributes to challenging the design of millimeter-wave wireless …
transmitting antennas, contributes to challenging the design of millimeter-wave wireless …
13.9 A 1.1 V 28.6 dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE
A Passamani, D Ponton, E Thaller… - … solid-state circuits …, 2017 - ieeexplore.ieee.org
In today's connected world, smaller and leaner wireless applications emerge, calling for
increasingly higher integration and smaller footprint, while ensuring high reliability and …
increasingly higher integration and smaller footprint, while ensuring high reliability and …
A novel dual mode configurable and tunable high-gain, high-efficient CMOS power amplifier for 5G applications
This paper presents a novel dual mode configurable and tunable power amplifier (PA) that
achieves a wide-bandwidth and high gain across a operational frequency spectrum of 20 to …
achieves a wide-bandwidth and high gain across a operational frequency spectrum of 20 to …
A 28-GHz Stacked Power Amplifier with 20.7-dBm Output P1dB in 28-nm Bulk CMOS
D Manente, F Padovan, D Seebacher… - IEEE Solid-State …, 2020 - ieeexplore.ieee.org
A fully integrated power amplifier (PA) for 5G communication systems is realized in a 28-nm
bulk CMOS technology. Power combining and stacking techniques are used to achieve a …
bulk CMOS technology. Power combining and stacking techniques are used to achieve a …