A 100–145 GHz area-efficient power amplifier in a 130 nm SiGe technology
A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is
designed and measured. This PA has an output power of 12.5–15.5 dBm in a frequency …
designed and measured. This PA has an output power of 12.5–15.5 dBm in a frequency …
A 77 GHz power amplifier using transformer-based power combiner in 90 nm CMOS
TY Chang, CS Wang, CK Wang - IEEE Custom Integrated …, 2010 - ieeexplore.ieee.org
A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has
been realized in a general purpose 90 nm CMOS technology. In order to improve the output …
been realized in a general purpose 90 nm CMOS technology. In order to improve the output …
1.29-W/mm2 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner
This letter presents a four-way parallel-series power amplifier (PA) in 55-nm SiGe BiCMOS
with in-line coplanar transformers for output power combining, and input/interstage power …
with in-line coplanar transformers for output power combining, and input/interstage power …
An 18 dBm 155-180 GHz SiGe power amplifier using a 4-way T-junction combining network
M Kucharski, HJ Ng, D Kissinger - ESSCIRC 2019-IEEE 45th …, 2019 - ieeexplore.ieee.org
This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology …
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology …
An integrated dual-mode CMOS power amplifier with linearizing body network
G Jeong, S Kang, T Joo, S Hong - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A dual-mode radio frequency CMOS power amplifier (PA) for Internet of Things application is
presented, which is integrated with the other circuits in a 55-nm bulk CMOS process. The …
presented, which is integrated with the other circuits in a 55-nm bulk CMOS process. The …
A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS
A two-stage 90-GHz stacked-FET power amplifier is implemented in 45-nm SOI CMOS. Dual
supply operation supports high gain, power and efficiency in the two-stage design. The …
supply operation supports high gain, power and efficiency in the two-stage design. The …
A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm P sat in 65-nm CMOS: Embedded Power Amplification
The effect of gain and embedding of amplifying cells (amp-cell) on the output power of
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …
A 37–40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process
JH Tsai, YC Cheng, CC Hung… - 2017 IEEE 7th …, 2017 - ieeexplore.ieee.org
A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs
pHEMT process. Utilizing two-way direct shunt power combining and low impedance …
pHEMT process. Utilizing two-way direct shunt power combining and low impedance …
Comparison of pMOS and nMOS 28 GHz high efficiency linear power amplifiers in 45 nm CMOS SOI
High efficiency, compact CMOS power amplifiers (PAs) based on nMOS and pMOS
transistors in 45 nm CMOS SOI technology for Ka-band applications are presented. Both the …
transistors in 45 nm CMOS SOI technology for Ka-band applications are presented. Both the …
A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays
To fulfill the insatiable demand for high data-rates, the millimeter-wave (mmW) 5G
communication standard will extensively use high-order complex-modulation schemes (eg …
communication standard will extensively use high-order complex-modulation schemes (eg …