The distribution coefficients for the growth of lattice-matched InGaAsP on (IOO)-InP
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …

InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …

Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …

The phase diagram of the In-Ga-As-P quaternary system has been determined
experimentally for several As isoconcentration sections at 600~ and 650~ The liquidus data …

Growth of InGaAs lattice matched to InP was achieved for the first time on the (100)
orientation of InP by liquid-phase epitaxy. Growth conditions and melt composition for such a …

The Er-doped InGaAsP epitaxial layers lattice-matched to InP with wavelengths of 1.29 and
1.55, um have been grown by liquid-phase epitaxy. When the Er amount doped in the …

Vapor‐phase epitaxial growth of In0. 53Ga0. 47As lattice matched to (100)‐oriented InP
substrates is described, and the performance of photodiodes fabricated from this material is …

Growth conditions and crystal properties for InP and InGaAs layers successively grown by
vapor phase epitaxy are described. After InGaAs lattice-matched to a (100) InP substrate is …

In experiments on the growth of InGaAsP alloys by liquid‐phase epitaxy on (100)‐InP
substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes …