In this study, we present the coupling between InAs submonolayer (SML) and stranski
krastanov (SK) quantum dots (QDs). Interaction between these two different dot families has …

This study investigates the optical and structural properties of multilayer InAs QDs
heterostructures designed with varying levels of growth interruption. Samples were subject …

This monograph is based on research into the structural, optical and spectral properties of
InAs/(In)(Al) GaAs quantum dot (QD) heterostructures, grown by using molecular beam …

In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with
composite In 0.15 Al 0.85 As/GaAs 0.85 Sb 0.15 strain-reducing layers (SRLs) by means of …

In this study, multistacked InAs submonolayer (SML) quantum dots (QDs) were sandwiched
in an InGaAs/GaAsSb dot-in-a-double-well (DDwell) structure to enhance the crystal quality …

In this work, the authors have investigated the optical and morphological characteristics of
uncapped InAs quantum dots (QDs) and their sensitivity to the surface passivation. The …

InAs QDs on strained {GaAs/InAs} quasi-monolayer (QML) with an alternative growth
mechanism were grown by molecular beam epitaxy (MBE). The properties of quantum dots …

The effects of matrix materials on the structural and optical properties of self-assembled InAs
quantum dots (QDs) grown by a molecular beam epitaxy were investigated by atomic force …

In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …

This paper presents a detailed study on the effect of the strain reducing layer (SRL) made
with InGaAsSb on the photoluminescence (PL) of type I InAs/GaAs quantum dots (QDs). For …