The effect of uniaxial stress on exciton states which possess an axis of symmetry is calculated for various directions of the applied stress. The specific example of a< 111> …
Numerical calculations of the optical-absorption coefficient for direct, excitonic transitions in a uniform applied electric field are presented. The electron-hole scattering is treated within …
In this chapter, exciton problems arising from band degeneracy are considered, especially in connection with the effects of external perturbations on the excitons originating from (s, p) …
Whereas the conventional practice of referring binding energies of deep donors and acceptors to the band edges of the host semiconductor does not produce transparent …
Y Zhang, W Ge, MD Sturge, J Zheng, B Wu - Physical Review B, 1993 - APS
The configuration coordinate (CC) and momentum conservation (MC) models have been widely used to explain the phonon sidebands of impurity spectra in semiconductors. In this …
We propose a model Hamiltonian for donors in Si and Ge, whose matrix elements can be expressed analytically for Slater-type basis wave functions defined in an ellipsoidal …
F Bechstedt, R Endeblein, M Koch - physica status solidi (b), 1980 - Wiley Online Library
Core exciton binding energies are calculated for the Ga 3d‐X6 conduction band transition inGa‐V compounds and the Si 2p‐Δ6 transition in Si. Various corrections to the Wannier …
B Stébé, G Munschy - Solid State Communications, 1981 - Elsevier
We study the influence of the short-range electron-hole exchange interaction (EHEI) on the (A°, X)-bound exciton ground state, for direct gap semiconductors with positive spin-orbit …
CM Penchina, JK Pribram, J Sak - Physical Review, 1969 - APS
Electric Field Effects on Excitonic Absorption in Semiconductors Page 1 PH YSI CAL REVIEW VOLUM F 188, NUM BER 3 15 DECEM 8ER 1969 Electric Field Effects on …