A theory of core excitons in semiconductors is formulated, taking into account the frequency
dependence of the dielectric matrix which screens the electron-hole attraction. The present …

The effect of uniaxial stress on exciton states which possess an axis of symmetry is
calculated for various directions of the applied stress. The specific example of a< 111> …

Numerical calculations of the optical-absorption coefficient for direct, excitonic transitions in
a uniform applied electric field are presented. The electron-hole scattering is treated within …

In this chapter, exciton problems arising from band degeneracy are considered, especially in
connection with the effects of external perturbations on the excitons originating from (s, p) …

Whereas the conventional practice of referring binding energies of deep donors and
acceptors to the band edges of the host semiconductor does not produce transparent …

The configuration coordinate (CC) and momentum conservation (MC) models have been
widely used to explain the phonon sidebands of impurity spectra in semiconductors. In this …

We propose a model Hamiltonian for donors in Si and Ge, whose matrix elements can be
expressed analytically for Slater-type basis wave functions defined in an ellipsoidal …

Core exciton binding energies are calculated for the Ga 3d‐X6 conduction band transition
inGa‐V compounds and the Si 2p‐Δ6 transition in Si. Various corrections to the Wannier …

We study the influence of the short-range electron-hole exchange interaction (EHEI) on the
(A°, X)-bound exciton ground state, for direct gap semiconductors with positive spin-orbit …

Electric Field Effects on Excitonic Absorption in Semiconductors Page 1 PH YSI CAL
REVIEW VOLUM F 188, NUM BER 3 15 DECEM 8ER 1969 Electric Field Effects on …