In these lectures I shall review (at an introductory level) the present knowledge of electronic
states in semiconductor heteros tructures. Although comparison with experiment will be …

Elliott's work on exciton effects at the direct absorption edge is extended to include other van
Hove singularities and deviations from the effective mass approximation. The sum rule …

The ground-state energies of the two-dimensional ionized-donor-bound exciton (D+, X)
have been calculated variationally for all values of the effective electron-to-hole mass ratio σ …

In the previous chapter we discussed mainly the optical properties of intrinsic excitons. Here
we consider the optical properties of defect and localized states in bulk materials, but …

The present state of research on multiexciton-impurity complexes is reviewed. These
complexes are weakly bound nonequilibrium states of a shallow neutral impurity (a donor or …

Using a method previously introduced to treat s states, we analyze the 2 p-excited states of
direct excitons in semiconductors. The splitting of the four 2 p levels, due to the degeneracy …

The ground-state energy of the negatively charged exciton in a semiconductor quantum well
is calculated assuming finite band offsets in a two-band model within the envelope-function …

Solid State Communications, Vol. 24, pp. 801—803 , 1977. Pergamon Press. Printed in
Great Britain FINE STRUCTURE OF INDIRECT E Page 1 Solid State Communications, Vol …

The optical-absorption spectrum of a complex neutral defect in silicon with a lowest bound-
exciton line at 615.0 meV has been studied. Only transitions to s-like excited electronic …

A review is given of the axial isoelectronic bound exciton centres of current interest in silicon.
A simple model is presented for the energy level structures of the bound excitons in which …