The quantum Hall effect (QHE) is one of the most prominent effects in modern solid state
physics. Since its discovery, the effect has been attracting interest by a steadily increasing …

Breakdown of the quantum Hall effect at high values of injected current is explained as a
consequence of an abrupt formation of a metallic conduction path from one edge of the …

The nonlinearities in the IV characteristics have been studied of high-mobility Si metal oxide
semiconductor field-effect transistors in the quantum Hall regime. The breakdown curves …

The discovery of the quantum Hall effect (QHE) marked a turning point in condensed-matter
physics. The measurement of the Hall resistance showed that electronic resistance could be …

Today, more than 20 years after the discovery of the quantum Hall effect, the number of
publications in this field, at more than one paper per day, is still increasing. This remarkable …

Enthusiasm for research on the quantum Hall effect (QHE) is unbounded. The QHE is one of
the most fascinating and beautiful phenomena in all branches of physics. Tremendous …

The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the
most important physics findings in the latter half of this century. The precise quantization of …

The birthday of the quantum Hall effect (QHE) can be fixed very accurately. It was the night of
the 4th to the 5th of February 1980 at around 2 am during an experiment at the High …

A large number of quantum Hall effect experiments on standard Hall devices indicate that
the external current is carried dominantly by edge currents confined within the depletion …

The unexpected discovery of the quantum Hall effect was the result of basic research on
silicon field-effect transistors combined with my experience in metrology, the science of …