This paper presents a study on the effect of matrix material on the morphology and optical
properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in …

This paper presents a study on the emission efficiency enhancement of InAsSb
nanostructures using a carrier blocking layer. InP is proposed to serve as the carrier …

Self-assembled InAs nanostructures on (001) InP substrate have been grown by molecular
beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and …

Engineering the surface energy, interface energy, and elastic strain energy in the system via
Sb exposure is used to realize the control on the morphology and optical properties of self …

Self-assembled InAs quantum dots (QDs) in an InAl (Ga) As matrix, which is lattice-matched
to InP substrate, were grown under various growth conditions by a molecular beam epitaxy …

The effects of matrix materials on the structural and optical properties of self-assembled InAs
quantum dots (QDs) grown by a molecular beam epitaxy were investigated by atomic force …

This paper presents a study on the formation and shape control of InAsSb/InP
nanostructures on InP (001) substrates. For the formation of InAsSb nanostructures …

InAs self-organized nanostructures in In0. 52Al0. 48As matrix have been grown on InP (0 0
1) substrates by molecular beam epitaxy. The morphologies of the nanostructures are found …

Influences of a thin In 0.32 Ga 0.68 As layer on the structural and optical properties of self-
assembled InAs quantum dots (QDs) embedded in an InAl (Ga) As matrix, which was lattice …

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have
been investigated by molecular beam epitaxy (MBE). A comparison between atomic force …