We demonstrate electrically pumped two-section mode locked quantum well lasers emitting
at the L-band of telecommunication wavelength on silicon utilizing die to wafer bonding …

We present an on-chip III-V-on-silicon mode-locked laser at 1.6 μm with a 1 GHz repetition
rate and-6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide …

In this paper, we review recent results on hybrid silicon mode-locked lasers with a focus on
low phase noise optical pulse generation. Taking a high level design approach to lowering …

In this paper, we report the optical injection locking of an L-band (∼ 1580 nm) 4.7 GHz III–V-
on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This …

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended
cavity geometries are presented. In passive mode-locked operation a 12 kHz− 3dB linewidth …

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1
MHz) from a mode-locked external-cavity semiconductor laser, through a combination of …

We experimentally study the pulse generation and the pulse train timing and amplitude
stability of a monolithic passively mode-locked multisection quantum-well semiconductor …

We investigate the design of hybrid silicon colliding-pulse mode-locked laser diodes and the
dependence on quantum well design. We show the reduction in microwave linewidth using …

In this paper, we report the development of an asymmetrical cladding single-section InAs/InP
quantum-dash mode-locked laser (MLL). The asymmetrical cladding structure allows us to …

Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale
high-speed and high-capacity applications. However, the phase noise/timing jitter of such …