Phase and spectral properties of optically injected semiconductor lasers

S Blin, C Guignard, P Besnard, R Gabet… - Comptes Rendus …, 2003 - Elsevier
The main control parameters of a single mode semiconductor laser submitted to an injected
external signal are the power and the frequency of the injected signal. Following their …

Cyclic three-phase amplitude jitter in mode-locked semiconductor lasers

AJ Lowery - Electronics Letters, 1989 - infona.pl
A numerical model of a mode-locked semiconductor laser operated at the third harmonic of
its cavity resonance predicts cyclic variations in the amplitudes of the three pulses circulating …

Effects of linewidth enhancement factor on period-one oscillations of optically injected semiconductor lasers

SK Hwang, DH Liang - Applied physics letters, 2006 - pubs.aip.org
The behavior of period-one oscillations in optically injected semiconductor lasers as a
function of linewidth enhancement factor is investigated. The occurrence of the dynamics is …

Frequency and intensity noise in injection-locked semiconductor lasers: theory and experiments

P Spano, S Piazzolla… - IEEE Journal of quantum …, 1986 - ieeexplore.ieee.org
Analytical expressions for the power spectral densities of intensity and frequency noise of
single-mode semiconductor lasers operating in a regime of injection locking are derived by …

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser

S Gee, S Ozharar, JJ Plant, PW Juodawlkis… - Optics letters, 2009 - opg.optica.org
We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1
MHz) from a mode-locked external-cavity semiconductor laser, through a combination of …

Abrupt transition from low-coherence to high-coherence radiation in a semiconductor laser with optical feedback

MD Gijón, C Masoller, J Tiana-Alsina - Optics express, 2023 - opg.optica.org
Semiconductor lasers are very sensitive to optical feedback. Although it is well known that
coherent feedback lowers the threshold of the laser, the characteristics of the transition from …

High‐frequency polarization self‐modulation and chaotic phenomena in external cavity semiconductor lasers

WH Loh, Y Ozeki, CL Tang - Applied Physics Letters, 1990 - pubs.aip.org
Optical pulses with repetition rates up to several hundred MHz have been generated
through a polarization self-modulation effect in an external cavity semiconductor laser …

Theory of mode-locked semiconductor lasers with finite absorber relaxation times

JLA Dubbeldam, JA Leegwater, D Lenstra - Applied physics letters, 1997 - pubs.aip.org
We investigate the influence of a finite absorber relaxation time on passively mode-locked
semiconductor lasers. We find that the mode-locking mechanism of Haus is surprisingly …

Passive mode locking of a semiconductor diode laser

Y Silberberg, PW Smith, DJ Eilenberger, DAB Miller… - Optics Letters, 1984 - opg.optica.org
By using a GaAs/GaAlAs multiple-quantum-well sample as a saturable absorber in an
external resonator, we have passively mode locked a GaAs laser to obtain pulses as short …

Active mode locking of linear and ring external-cavity semiconductor lasers

A Olsson, C Tang - IEEE Journal of Quantum Electronics, 1981 - ieeexplore.ieee.org
Active mode locking of linear and ring external-cavity semiconductor lasers Page 1 IEEE
JOURNAL OF QUANTUM ELECTRONICS, VOL. QE-17, NO. OCTOBER 1981 Active Mode …