In this paper, a theoretical model is used to investigate the lasing characteristics of
InGaAs/GaAs quantum-dot lasers. The rate equations for InGaAs/GaAs are numerically …

In this study, a theoretical model is used to simulate the lasing characteristics of
InGaAs/GaAs self-assembled quantum dot lasers. The rate equation for InGaAs/GaAs is …

Experimental and theoretical study of the self-heating effect on the two-state lasing
behaviors in 1.3-µm self-assembled InAs–GaAs quantum dot (QD) lasers is presented …

The spontaneous emission spectra and lasing characteristics of long-wavelength (1.3-/spl
mu/m) quantum-dot lasers are studied. It is found experimentally that nonradiative …

A self-consistent rate equation model is presented to investigate the influence of carrier
relaxation on the modulation response of 1.3 μ m InAs–GaAs quantum dot lasers. In this …

Systematic investigation of lasing characteristics of self-formed InGaAs quantum dot lasers
with multi-stacked dot layer is reported. We show that the lasing wavelength is strongly …

In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-
assembled quantum dot (QD) laser, based on the standard rate equations. By using the …

A theoretical calculation is presented for the effect of homogeneous broadening of optical
gain on lasing spectra of quantum-dot lasers. Based on a coupled set of rate equations …

We studied the injection current dependence of room-temperature lasing spectra of a 1.3-μm
self-assembled InAs∕ GaAs quantum-dot laser both experimentally and theoretically …

We have developed a simple theoretical model to account for the effects of different p-
doping levels on the temperature-dependent performance of InAs/GaAs self-assembled …