Two types of mesa-type InGaAs/InP pin photodiodes have been fabricated from wafers
grown by chemical beam epitaxy (CBE):(1) a conventional diffused InGaAs homojunction …

Epitaxial films ofIDo. 53 GIlo. 47 As lattice-matched to InP substrates have been grown by
molecular beam epitaxy. The carrier concentrations were as low as 3 X 1015 cm 3. High …

We have developed In0. 82Ga0. 18As p‐n homojunction photodiodes that have a long‐
wavelength threshold at about 2.65 μm. A compositionally graded In x Ga1− x As layer …

Recently, sensitive II\J53 Gao. 47 As/InP heterostructure avalanche photodiodes 1.2 were
fabricated for use in longwavelength (A= 1.0-1.6, urn) lightwave communications systems …

The electrical and optoelectronic characteristics of planar InP/InGaAs p‐i‐n photodiodes
grown by metalorganic chemical vapor deposition were extensively investigated. A typical …

Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures
grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused pn …

High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical
beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of …

High-quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP
substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated …

Avalanche photodiodes with fast response times and high quantum efficiencies in the 1. 0-1.
6-! lm wavelength region are expected to find wide use in low-loss wide-bandwidth optical …

A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been
achieved with InP/lnGaAsP/lnGaAs avalanche photodiodes (APD's) grown by chemical …