We investigated the growth, crystal structure, elemental composition and electrical transport
characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in …

Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor
deposition method. The crystal structure and photoluminescence spectra indicate that the …

P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor
deposition process. The incorporation of Ag was confirmed by selected-area energy …

ZnO nanowires with high crystalline and optical properties are characterized, showing
strong effect of the surface defect states. In order to optimize the performance of devices …

The conduction through unintentionally doped ZnO nanowires grown by metalorganic
chemical vapor deposition versus temperature (4 to 300 K) and nanowire radius (50 to 175 …

Large area Ga-doped ZnO nanowire arrays have been vertically grown on transparent
conducting substrate by a simple chemical vapor deposition method. Experimental results …

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In
order to correctly assess the quality, functionality, and possible applications of such …

ZnO is a promising semiconductor material with a direct band gap energy of 3.3 eV which
makes it a good candidate for UV and visible range light emitting devices. Metalorganic …

ZnO nanowire based field effect transistor devices show the distinct performance depending
on whether comparably oxygen-rich or oxygen-poor conditions were used for nanowire …

The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by
photoluminescence spectroscopy carried out at 13–290 K⁠. In as-grown nanowires …