We report the suppression of< 100> dark-line defect growth in AlGaAs/In x Ga 1-x As
quantum well lasers on Si substrates grown by metalorganic chemical vapor deposition. An …

High-quality GaAs layers with dislocation densities of less than 5× 10 6 cm-2 on Si
substrates have been obtained through a combination of thermal-cycle annealing and …

Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs
quantum well lasers. Dark-line defects have high growth velocity along 100-line in GaAs …

We report the influences of dark line defects (DLD's) on characteristics of AlGaAs/GaAs
quantum well lasers grown on Si substrates under continuous-wave aging operation …

We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser
diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations …

Data are presented demonstrating continuous (cw) 300 K operation of pn Al" Ga1_xAs-GaAs
quantum well heterostructure lasers grown on Si and fabricated with naturally occurring …

A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for
strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under …

InGaAs/AlGaAs multiple quantum well lasers grown on silicon (001) by molecular beam
epitaxy have been demonstrated. By inserting InAlAs trapping layers into AlGaAs cladding …

For investigation of the catastrophic optical damage (COD) of InGaAsP material systems
emitting at 0.8 ym, separate-confinement-heterostructure single-quantum-well structures …

Strained‐layer InGaAs/GaAs single quantum well lasers were grown by gas‐source
molecular‐beam epitaxy at temperatures between 430 and 610° C. The optimum growth …