The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

Low-pressure MOCVD has been used to grow layers of InP, InGaAs, GaInAsP and quantum
well material on planar substrates patterned with silica masks. The thicknesses and, where …

Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting
at 1.23 ?m grown by low-pressure metalorganic chemical vapour deposition × Close The …

The growth of the promising semiconductor alloy GaInAs by OMVPE has been studied using
organometallic vapor phase epitaxy (OMVPE). The growth process and materials properties …

Layer structures comprising InP and InGaAsP were compared when grown using nitrogen
versus hydrogen as carrier gas. Under nitrogen a remarkable improvement in layer …

GaIn As grown on InP at atmospheric pressure using organometallic vapor phase epitaxy is
characterized by x-ray diffraction, transmission electron microscopy (TEM), and Hall …

We report the successful growth of Ga0. 49 Iuo. 5! P-GaAs superlattices on GaAs and Si
substrates by low-pressure metalorganic chemical vapor deposition. The high quality of the …

Room-temperature GaInAsP/InP DH lasers emitting at 1.3? m and having very low threshold
current densities have been grown by LP MOCVD. Thresholds were lower than the best …

Abstract (Al x Ga 1− x) 0.5 In 0.5 P quaternary alloy has been successfully grown by
conventional atmospheric-pressure MOCVD using triethylaluminum, triethylgallium …

The first successful growth and fabrication of long wavelength (1.5–1.7 μm) DH and MQW
lasers by atmospheric pressure MOVPE in a 'phosphorus-free'material system is reported …