Conduction‐band minima of InP: Ordering and absolute energies

S Zollner, U Schmid, NE Christensen… - Applied physics …, 1990 - pubs.aip.org
Since the conduction‐band structure of InP is still controversial, we perform an ab initio
linear muffin tin orbital (LMTO) band structure calculation to obtain the valence bands with …

Band structure and high-field transport properties of InP

LW James, JP Van Dyke, F Herman, DM Chang - Physical Review B, 1970 - APS
Using the technique of energy-distribution analysis of photoemitted electrons, we have
accurately located the position of several band-structure features of InP, including the next …

Intra- and Interband Free-Carrier Absorption and the Fundamental Absorption Edge in -Type InP

WP Dumke, MR Lorenz, GD Pettit - Physical Review B, 1970 - APS
The infrared absorption in n-type InP was studied as a function of free-carrier concentration
from 3.5× 10 17 to∼ 10 19 cm− 3 in the spectral range of 10 μ to the fundamental absorption …

Band structure and electronic properties of InP

H Neumann, E Hess, I Topol - Czechoslovak Journal of Physics B, 1975 - Springer
A combination of the pseudopotential method with the k, p method was used to calculate the
complete band structure of InP. The pseudopotential form factors were determined by fitting …

Electronic and optical properties of InP

R Ahuja, S Auluck, O Eriksson, JM Wills… - Solid state …, 1997 - Elsevier
We have calculated the band structure and dielectric function of InP by means of an accurate
first-principles method using the full potential linear muffin-tin orbital method (FPLMTO). Our …

Infrared reflectance study of n-type InP grown by the LEC method

QH Hua, GP Li, XK He, Q Wang, TN Sun - Materials Letters, 1985 - Elsevier
Infrared reflectance spectra of n-type InP were measured in the mid and far infrared region,
using a FT IR spectrometer. Two reflectivity minima R min and the corresponding …

[引用][C] Band structure of InP: Overview

EP O'Reilly - EMIS DATAREVIEWS SERIES, 2000 - INSPEC PUBLICATION

Index of refraction of n‐type InP at 0.633‐ and 1.15‐μm wavelengths as a function of carrier concentration

MS Whalen, J Stone - Journal of Applied Physics, 1982 - pubs.aip.org
Indium phosphide is used extensively as a substrate material for epitaxially grown long-
wavelength (> 1/-lm) optical sources and detectors. In many applications, accurate values of …

Electronic structure due to hydrogen and vanadium as substitutional impurities in InP

PK Khowash, DE Ellis - Physical Review B, 1988 - APS
The self-consistent local-density theory is used in a cluster model to calculate the charge
distribution, one-electron energy spectra, and the density of states for pure InP and for H and …

A multi-nuclear magnetic resonance and density functional theory investigation of epitaxially grown InGaP 2

PJ Knijn, PJM van Bentum, CM Fang… - Physical Chemistry …, 2016 - pubs.rsc.org
In this paper the short and long range order in In0. 483Ga0. 517P thin films is investigated
by solid-state Nuclear Magnetic Resonance (NMR) spectroscopy. To this end two samples …