We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-well structures
grown by atmospheric-pressure metalorganic vapor phase epitaxy on (111) A GaAs …

We review the recent advances in the fabrication and properties of GaAs/AlGaAs and
InGaAs/GaAs quantum well (QW) structures grown on (111) A GaAs substrates by …

GaAs/AlGaAs quantum wells (QWs) were grown on (411) A‐oriented GaAs substrates by
molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are almost the same …

We investigate the embedded interfaces of Ga As∕ Al Ga As quantum wells grown by metal
organic vapor phase epitaxy on slightly (< 1)-misoriented (001) substrates using selective …

Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …

We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-
GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence …

We report on a study of the growth parameters and their effect on the structural and optical
properties of GaAs/AlGaAs multiquantum well (MQW) structures grown on novel (111) A …

GaAs-At Gal_x As single and multiquantum well structures grown by metalorganic chemical
vapor deposition have been examined for the first time in detail using low-temperature …

High quality, GalnAs, single quantum wens lattice matched to InP barriers, have been grown
by metalorganic vapor phase epitaxy at reduced pressures and with the application of short …

A composition distribution of an Al x Ga1− x As epilayer on a V‐grooved substrate grown by
low‐pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of …