We would like to report on the performance of buried heterostructure (BH) GaAs/Ga 0.65 Al
0.35 As surface emitting (SE) lasers with p-type Ga 0.9 Al 0.1 As/Ga 0.4 Al 0.6 As and SiO …

First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried
heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition …

For the purpose of introducing a current confining structure to the GaAlAs/GaAs surface
emitting (SE) laser, a circular buried heterostructure (CBH) was introduced. The selective …

Room-temperature operation of new type of Gal_. Al. As-GaAs laser employing distributed
Bragg reflectors for optical and carrier confinement has been demonstrated. These …

Abstract A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d\cong3 µm) and …

The first cw operation of an AlGaAs/GaAs distributed Bragg reflector laser was achieved at
room temperature with a threshold current as low as 38 mA. Surface emission exceeding 4 …

Abstract Surface emitting GaAs/GaAlAs diodes with a Bragg reflector grown by metalorganic
chemical vapor deposition (MOCVD) were investigated. They have a double heterostructure …

Modifications to reduce the series resistance in p‐type semiconductor distributed Bragg
reflectors (DBR) consisting of ten pairs of quarter‐wavelength GaAs (high refractive …

A novel AlGaAs/GaAs distributed Bragg reflector laser utilizing a multiquantum well structure
both as an active waveguide and as a low loss passive waveguide was fabricated. The …