Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
We report the development of hybrid complementary inverters based on p-channel organic
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …
Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors
JB Kim, C Fuentes-Hernandez, SJ Kim, S Choi… - Organic …, 2010 - Elsevier
Hybrid organic–inorganic complementary inverters composed of pentacene and amorphous
InGaZnO for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible …
InGaZnO for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible …
Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric
The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters
with pentacene ( p type) and ZnO ( n type) hybrid channels on rf-deposited Al O x …
with pentacene ( p type) and ZnO ( n type) hybrid channels on rf-deposited Al O x …
Vertically stacked hybrid organic–inorganic complementary inverters with low operating voltage on flexible substrates
Hybrid organic–inorganic complementary inverters were demonstrated on a flexible
polyethersulfone (PES) substrate with vertically stacked p-channel pentacene and n …
polyethersulfone (PES) substrate with vertically stacked p-channel pentacene and n …
Solution-processed hybrid organic–inorganic complementary thin-film transistor inverter
H Cheong, K Kuribara, S Ogura… - Japanese journal of …, 2016 - iopscience.iop.org
We investigated hybrid organic–inorganic complementary inverters with a solution-
processed indium–gallium–zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p …
processed indium–gallium–zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p …
High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
PT Liu, YT Chou, LF Teng, CS Fuh - Applied Physics Letters, 2010 - pubs.aip.org
Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are
demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) …
demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) …
Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2V
We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-
inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n …
inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n …
Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors
Complementary inverters composed of pentacene for the p-channel thin-film transistors
(TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been …
(TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been …
Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
We report on the fabrication of p-channel thin film transistors (TFTs) and vertically stacked
complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel …
complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel …
Characterization of zinc oxide and pentacene thin film transistors for CMOS inverters
H Iechi, Y Watanabe, H Yamauchi… - IEICE transactions on …, 2008 - search.ieice.org
We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and
pentacene, and investigated their basic characteristics. We found that field-effect mobility is …
pentacene, and investigated their basic characteristics. We found that field-effect mobility is …