The formation of a seal ring in a semiconductor integrated circuit (IC) die is described.
Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the …

BACKGROUND The present disclosure generally relates to three-dimen sional integrated
circuit (IC) devices. In particular, this disclosure relates to arrangements of multiple …

BACKGROUND Currently, integrated circuit (IC) package assemblies may include a solder
mask layer composed of polymer as an outermost layer of a package Substrate to facilitate …

US Cl.(57) CPC...... HOIL 27/14632 (2013.01); HOIL 27/1462 An image sensor wafer may be
stacked on top of a digital (2013.01); HOIL 27/1464 (2013.01); HOIL signal processor (DSP) …

BACKGROUND Packaged semiconductor dies, including memory chips, microprocessor
chips, and imager chips, typically include a semiconductor die mounted on a Substrate and …

Integrated circuit dies having multi-gate, non-planar transistors built into a back-end-of-line
portion of the die are described. In an example, non-planar transistors include an …

US9502625B2 - Electrophotographic deposition of unpackaged semiconductor device -
Google Patents US9502625B2 - Electrophotographic deposition of unpackaged …

An embodiment of the present invention is a technique to Stack dies in a die assembly. A
plurality of dies are Stacked on top of one another in a Staggering configuration Such that an …

Signals are coupled to and from stacked semiconductor dies through first and second sets of
external terminals. The external terminals in the second set are connected to respective …

BACKGROUND In the semiconductor industry, devices are fabricated by a number of
processes to produce precisely-defined structures of an ever-decreasing size. Even the …