Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO
multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly …

Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

In the last years there has been a renewed interest for zinc oxide semiconductor, mainly
triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films …

A current detection scanning probe technique is developed that quantifies frequency-
dependent local transport properties. The approach, referred to as nanoimpedance …

We report scanning capacitance microscopy (SCM) images of a working p-channel metal–
oxide–semiconductor field-effect transistor (P-MOSFET) during device operation …

Two-dimensional (2D) dopant profiling techniques have received increasing attention as
critical dimensions of metal–oxide–semiconductor field-effect transistors (MOSFETs) …

Determination of the two-dimensional 2D carrier profiles has emerged as an important issue
for the semiconductor industry. A two-dimensional profile or image is obtained when a cross …

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications
owing to their tunable electron concentration via structural and surface defect engineering. A …