A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …
real-estate is at a premium, necessitates high output power from individual transmitter …
2.7 A wideband 28GHz power amplifier supporting 8× 100MHz carrier aggregation for 5G in 40nm CMOS
To meet rising demand, broadband-cellular-data providers are racing to deploy fifth
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
A 19.1% PAE, 22.4-dBm 53-GHz parallel power combining power amplifier with stacked-FET techniques in 90-nm CMOS
WC Sun, CN Kuo - 2019 IEEE MTT-S International Microwave …, 2019 - ieeexplore.ieee.org
A two-stage fully integrated 53-GHz stacked-FET power amplifier (PA) is implemented in 90-
nm bulk CMOS. The output stage is optimized to achieve high output power while …
nm bulk CMOS. The output stage is optimized to achieve high output power while …
24.7 A 15dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16nm FinFET CMOS
B Philippe, P Reynaert - 2020 IEEE International Solid-State …, 2020 - ieeexplore.ieee.org
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-
band communication. A high level of integration in a nm-CMOS technology is necessary to …
band communication. A high level of integration in a nm-CMOS technology is necessary to …
A 19-43 GHz linear power amplifier in 28nm bulk CMOS for 5G phased array
MMR Esmael, MAY Abdalla… - 2019 IEEE Topical …, 2019 - ieeexplore.ieee.org
This paper presents a linear power amplifier (PA) implemented in 28-nm bulk CMOS
process for 5G communication systems with wideband operation in order to cover all …
process for 5G communication systems with wideband operation in order to cover all …
20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
A 28GHz Compact 3-Way Transformer-Based Parallel-Series Doherty Power Amplifier With 20.4%/14.2% PAE at 6-/12-dB Power Back-off and 25.5dBm PSAT in …
The 28GHz band for fifth-generation (5G) millimeter-wave wireless communication
supporting high-order QAM, OFDM, and carrier aggregation (CA) requires excellent power …
supporting high-order QAM, OFDM, and carrier aggregation (CA) requires excellent power …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …