An embedded 200 GHz power amplifier with 9.4 dBm saturated power and 19.5 dB gain in 65 nm CMOS
This paper presents a 200 GHz power amplifier in 65 nm bulk CMOS technology aiming for
maximizing the saturated power (Psat). A matched-cascode amplification cell (amp-cell) is …
maximizing the saturated power (Psat). A matched-cascode amplification cell (amp-cell) is …
A 1V 32.1 dBm 92-to-102GHz power amplifier with a scalable 128-to-1 power combiner achieving 15% peak PAE in a 65nm bulk CMOS process
W Zhu, J Wang, R Wang, J Zhang, C Li… - … Solid-State Circuits …, 2022 - ieeexplore.ieee.org
The sixth-generation (6G) wireless communication is emerging and continuous the increase
of the speed and data-rate achieved by 5G. A major challenge in 6G is to provide a large …
of the speed and data-rate achieved by 5G. A major challenge in 6G is to provide a large …
A linear and efficient power amplifier supporting wideband 64-QAM for 5G applications from 26 to 30 GHz in SiGe: C BiCMOS
This paper presents a compact transformer-based linear and efficient power amplifier (PA) in
0.13-μm SiGe: C BiCMOS for 5G applications. To reduce the form factor, an ultra-compact …
0.13-μm SiGe: C BiCMOS for 5G applications. To reduce the form factor, an ultra-compact …
A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
A 42–46.4% PAE continuous class-F power amplifier with Cgd neutralization at 26–34 GHz in 65 nm CMOS for 5G applications
This paper presents a wideband high efficiency continuous class-F (CCF) power amplifier
(PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic …
(PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic …
A 28-GHz highly efficient CMOS power amplifier using a compact symmetrical 8-way parallel-parallel power combiner with IMD3 cancellation method
This paper presents a linear CMOS power amplifier (PA) for mm-wave 5G applications. A
compact 8-way parallel-parallel power combiner is proposed to increase Pout with low loss …
compact 8-way parallel-parallel power combiner is proposed to increase Pout with low loss …
A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT
Z Griffith, M Urteaga, P Rowell… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier
(SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five …
(SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five …
A Highly Linear and Efficient 28-GHz PA With a Psat of 23.2 dBm, P1 dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS
A Asoodeh, HM Lavasani, M Cai… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
This article presents a 28-GHz power amplifier (PA) suitable for fifth-generation (5G)
wireless systems. Designed in a 65-nm bulk CMOS, the PA achieves a saturated output …
wireless systems. Designed in a 65-nm bulk CMOS, the PA achieves a saturated output …
Comparison of pMOS and nMOS 28 GHz high efficiency linear power amplifiers in 45 nm CMOS SOI
High efficiency, compact CMOS power amplifiers (PAs) based on nMOS and pMOS
transistors in 45 nm CMOS SOI technology for Ka-band applications are presented. Both the …
transistors in 45 nm CMOS SOI technology for Ka-band applications are presented. Both the …
A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications
In recent years, there has been tremendous interest in trying to implement the power
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …