This monograph is based on research into the structural, optical and spectral properties of
InAs/(In)(Al) GaAs quantum dot (QD) heterostructures, grown by using molecular beam …

This book explores the effects of growth pause or ripening time on the properties of quantum
dots (QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on …

In (Ga) As/GaAs quantum-dot infrared photodetectors and focal plane cameras suit
application in areas including space science, military battlefields and medical diagnosis …

Morphological and optical properties of MBE-grown single and bilayer InAs/GaAs quantum-
dot heterostructure with comparatively larger monolayer coverage (∼ 3.3 ML) are …

The authors report a detailed analysis of an epitaxial growth technique for indium arsenide
(InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from …

Novel InSb quantum dot (QD) nanostructures grown by molecular beam epitaxy (MBE) are
investigated in order to improve the performance of light sources and detectors for the …

We report on the design and fabrication of (Al) GaAs (Sb)/InAs tensile strained quantum-dot
(QD) based detector material for thermal infrared imaging applications in the long …

InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical
devices for fiber-optic communication. Furthermore, they may be used for the fabrication of …

Potential applications of quantum dots (QDs) have driven extensive efforts to grow high-
quality QDs on semiconductor substrates by using various techniques [1]. Optoelectronic …

The majority of objects, those with a temperature between 100 and 400 K, emit strong
electromagnetic radiation in the infrared region, especially in 1–14 µm region, which …