Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1− xAsyP1− y Alloys
M Razeghi - Semiconductors and Semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses that metallo-organic chemical vapor deposition
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …
The InxGa1− xAsyP1− y (0.53< x< 1, 0< y< 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy
W Lin, YK Tu, TA Dai, WJ Ho, GY Lee, HP Shiao - Journal of crystal growth, 1992 - Elsevier
A systematic study in the growth of In x Ga 1-x As y P 1-y (0.53< x< 1, 0< y< 1) compound
semiconductor and its application to laser diode structure had been carried out by the low …
semiconductor and its application to laser diode structure had been carried out by the low …
Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
M Razeghi, JP Duchemin - Journal of Crystal Growth, 1984 - Elsevier
The low pressure metalorganic chemical vapour deposition (LPMOCVD) growth of Ga x In 1-
x As y P 1-y-InP lattice matched system, with high mobilities, sharp interfaces, low …
x As y P 1-y-InP lattice matched system, with high mobilities, sharp interfaces, low …
Deposition of InGaAsP alloys on GaAs by low pressure metalorganic vapor phase epitaxy: Theory and experiments
S Pellegrino, L Vitali - Journal of electronic materials, 1996 - Springer
A combined thermodynamic-kinetic approach to the epitaxial deposition of InGaAsP alloys
on GaAs substrates is presented. Good agreement with experimental group V solid phase …
on GaAs substrates is presented. Good agreement with experimental group V solid phase …
Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
M Ishikawa, Y Ohba, H Sugawara, M Yamamoto… - Applied physics …, 1986 - pubs.aip.org
Room-temperature cw operation for InGaP IInGaAlP double heterostructure (DH) laser
diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by …
diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by …
The liquid-phase epitaxial growth of InGaAsP
K Nakajima - Semiconductors and semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
Growth of high-quality InGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
Y Ohba, M Ishikawa, H Sugawara, M Yamamoto… - Journal of Crystal …, 1986 - Elsevier
In an attempt to obtain high-quality In 0.5 (Ga 1− x A1 x) 0.5 P epilayers on GaAs substrates
for visible semiconductor la applications, effects of growth procedure and conditions (growth …
for visible semiconductor la applications, effects of growth procedure and conditions (growth …
Doping of InP and GaInAs with S during metalorganic vapor‐phase epitaxy
RA Logan, T Tanbun‐Ek, AM Sergent - Journal of applied physics, 1989 - pubs.aip.org
The doping characteristics of S in the metalorganic vapor-phase epitaxial growth of InP and
GalnAs are studied using three different but consistent methods of determining the doping …
GalnAs are studied using three different but consistent methods of determining the doping …
Nondestructive assessment of films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition
ZC Feng, E Armour, I Ferguson, RA Stall… - Journal of applied …, 1999 - pubs.aip.org
The quaternary alloy In 0.48 (Ga 1− x Al x) 0.52 P, lattice-matched to GaAs, has a direct
band gap transition in the wavelength range of green-red light and is useful in optoelectronic …
band gap transition in the wavelength range of green-red light and is useful in optoelectronic …
GaInAsP gas-source MBE technology
M Pessa, K Tappura, A Ovtchinnikov - Thin Solid Films, 1995 - Elsevier
This paper describes the preparation of GaxIn1− xAsyP1− y compound semiconductors by a
gas-source molecular beam epitaxy method. Controlling the composition of GaxIn1 …
gas-source molecular beam epitaxy method. Controlling the composition of GaxIn1 …