The evolution of the structural and electrical properties of Ni/Ti/SiC Schottky contacts upon
thermal treatments was investigated. The samples were prepared by sequentially …

Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence
of the electrical parameters, caused by a mixed barrier on the contact area and interface …

Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …

Abstract 4H–SiC Schottky diodes with nickel silicide contacts were formed by consecutive
deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by …

The interfacial reaction and phase formation as a function of the annealing temperature (600–
1000° C) and time were investigated on both titanium and nickel thin films evaporated on n …

The composition and microstructure of compound contacts to 4H-SiC containing both
titanium and nickel were investigated. Samples were prepared by metal evaporation on …

The structural and electrical characterisation of nickel contacts on n-type silicon carbide was
performed to improve the ohmic behaviour at high temperatures. The formation of nickel …

Nickel-based Schottky contacts to n-6H-SiC, subjected to various heat treatments, have
been studied by the capacitancevoltage technique, X-ray diffractometry and AES sputter …

The transition from Schottky to ohmic contact in the nickel silicide/SiC system during
annealing from 600 to 950° C was investigated by measuring the electrical properties of the …

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …