We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …

Control on size and density of self-assembled InAs quantum dots (QDs) grown by molecular
beam epitaxy on (001) GaAs has been performed. By properly adjusting the substrate …

We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 μm, grown
on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing …

We investigate by atomic force microscopy the changes in the morphology of InAs self-
assembled quantum dots (QDs) following thermal annealing at growth temperature and …

We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by
changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the …

Self-assembled InAs quantum dots were grown on (001) orientated Si substrates by
molecular beam epitaxy. Growth condition dependence of dot formation was studied. The …

The authors report the effects of rapid thermal annealing (RTA) on the emission properties of
highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 μ m grown on GaAs …

We report a detailed study of In As∕ Ga As quantum dot (QD) structures grown by molecular
beam epitaxy with InAs coverages θ continuously graded from 1.5 to 2.9 ML. The effect of …

The authors investigated a set of self-assembled In As∕ Ga As quantum dots (QDs) formed
by molecular beam epitaxy at low temperature (LT, 250 C⁠) and postgrowth annealing. A …

We have investigated the influence of various growth parameters on the optical properties of
self-assembled InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) in …