The electrochemical etching of n+‐type GaAs in a hydrofluoric acid (HF) solution results in
the formation of a porous layer. The current–potential characteristic I (V) of the n+‐type GaAs …

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

A porous GaAs layer has been formed by electrochemical anodization in HF based solution
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …

Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …

We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

The optical properties of porous GaAs formed electrochemically on n-and p-type GaAs in
HCl electrolyte are reported. The porous structure comprises GaAs crystallites ranging in …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

Porous GaAs was prepared using electrochemical anodization technique of a cristalline
GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions …

Porous GaAs layers have been prepared by electrochemical etching of p+-type GaAs (10 0)
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …

In this paper we report the first results obtained in the study on the properties of porous GaAs
(P-GaAs) produced by electrochemical etching in electrolytes on the basis of hydrofluoric …