InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …

The effect of a potassium overlayer on nitridation and oxidation of the InP (100) surface is
investigated by core‐level and valence‐band photoemission spectroscopy using …

The nitridation of InP (100) surfaces has been studied using synchrotron radiation
photoemission. The samples were chemically cleaned and then ion bombarded, which …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

The nitrides of group III metals: AlN, GaN and InN are very important materials due to their
applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It …

The nitrides of group III metals as InN are very important materials in optoelectronic (light-
emitting diodes and laser diodes) and microelectronic areas. It is essential for the realisation …

High-resolution x-ray diffraction (HR-XRD), photoluminescence (PL), synchrotron radiation
extended x-ray absorption fine-structure (SR-EXAFS) measurements are methodically …

The room temperature adsorption of molecular nitrogen on a InP (110) surface modified by a
potassium overlayer is investigated by means of valence band and core level photoemission …

Ion beam nitridation (IBN) of InP at room temperature was studied as a function of both ion
incident angle and energy. The InP surfaces were exposed to ion beam in an ultrahigh …

InP is an important semiconductor for optoelectronic and microwave devices. This material is
currently used either as an active homoepitaxial layer or as a substrate for …