The use of error-correcting codes is a common strategy to protect memories from errors. Single-error correction, double-error detection linear block codes have been traditionally …
In recent years, there has been a growing interest in multi-bit error correction codes (ECCs) to protect SRAM memories. This has been caused by the increased number of multiple …
S Liu, P Reviriego, L Xiao… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
As multiple cell upsets (MCUs) become more frequent on SRAM memory devices, there is a growing interest on error correction codes that can correct multibit errors. Orthogonal Latin …
Error correction codes (ECCs) are commonly used to protect memories from errors. As multibit errors become more frequent, single error correction codes are not enough and …
K Namba, F Lombardi - IEEE Transactions on Device and …, 2014 - ieeexplore.ieee.org
This paper presents a concurrent error detection (CED) scheme for orthogonal Latin square (OLS) parallel decoders. Different from a CED scheme found in the technical literature that …
P Reviriego, S Liu, JA Maestro, S Lee… - … on Defect and Fault …, 2013 - ieeexplore.ieee.org
Soft errors have been a concern in memories for many years. In older technologies, soft errors typically affected a single memory cell but as technology scaled, Multiple Cell Upsets …
To avoid data corruption, error correction codes (ECCs) are widely used to protect memories. ECCs introduce a delay penalty in accessing the data as encoding or decoding …
There has been recent interest on designing double error correction (DEC) codes for 32-bit data words that support fast decoding as they can be useful to protect memories. To that …
S Liu, L Xiao, Z Mao - Microelectronics Reliability, 2016 - Elsevier
As CMOS technology size scales down, multiple cell upsets (MCUs) caused by a single radiation particle have become one of the most challenging reliability issues for memories …