The linewidth enhancement factor (α H) is an important parameter for semiconductor lasers.
In this paper, we investigate, both theoretically and experimentally, the key parameters that …

The past several years have seen remarkable progress in the fabrication of quantum dots
and quantum-dot lasers. Thanks to new self-organized growth technologies for example, as …

There is a need to understand the performance limitations and the role of special techniques
to enhance quantum dot (QD) laser performance. In this context, we have examined the role …

The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can
appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum …

We report on the generation of dual-wavelength self-mode-locking pulses from an InP-
based quantum dot laser. The demonstrated device operates simultaneously at both 1543.7 …

The optical performance of quantum dot lasers with different dots-in-a-well (DWELL)
structures is studied as a function of the well number and the indium composition in the …

The gain spectrum of a quantum dot laser operating at 1300 nm is studied at high carrier
densities, corresponding to dot occupancies of∼ 8 eh pairs per quantum dot. A reduction in …

Semiconductor quantum dot lasers have been extensively studied for applications in future
lightwave telecommunications systems. This paper summarizes a tutorial that was presented …

A stacked p-doped quantum dot active region is used to obtain a high characteristic
temperature in GaAs-based 1.3 µm lasers. A characteristic temperature of 232 K (213 K) is …

We describe the operation of lasers having active regions composed of InP self-assembled
quantum dots embedded in In0. 5Al0. 3Ga0. 2P grown on GaAs (100) substrates by …