Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low
threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic …

We demonstrate the first quantum dot (QD) laser on a silicon substrate with efficient coupling
of light to a silicon waveguide under the QD gain region. Continuous wave operation up to …

Amplified spontaneous emission measurements are investigated below threshold in InAs
quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained …

Improved device characteristics of high‐power InGaAs/GaAs quantum dot (QD) lasers are
presented. An ideal internal quantum efficiency close to 100%, very low transparency …

It is proposed that the recently observed quasi-periodic modulation of the emission spectra
of quantum dot lasers is due to interference effects associated with waveguide leakage into …

High-performance quantum dot QD lasers near 1.3 m were fabricated using four stacks of
InAs QDs embedded within strained InGaAs quantum wells as an active region and a …

An InP based tunnel injection quantum dot (QD) laser and a reference quantum dot laser
designed to emit at 1.55 μ m were grown by molecular beam epitaxy. The lattice matched …

Continuous wave room-temperature output power of∼ 3 W for edge emitters and of 1.2 mW
for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs …

In this paper, a grating-coupled external-cavity quantum dot laser is tuned across a 201 nm
range at a maximum bias of 2.87 kA/cm^ sup 2^, one order of magnitude less than the bias …

1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures
are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to …