High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …

We have studied Schottky barrier contacts to n-type 4H-SiC with Cr, Mo, Ta, W, Au, and Ni.
We have focused on effects of the metal work function, measurement technique and …

We prepared Ni and Ni2Si Schottky contacts on lightly doped (5.5× 1015cm− 3) n-type 6H–
SiC and evaluated their thermal degradation after annealing in the temperature range of 750 …

Nickel-based Schottky contacts to n-6H-SiC, subjected to various heat treatments, have
been studied by the capacitancevoltage technique, X-ray diffractometry and AES sputter …

The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …

We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …

A metallization scheme suitable to explore the capability of 4H–SiC for high temperature
applications was designed and fabricated on Schottky barrier diodes (SBDs). The device …

Abstract The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have
been investigated. The electrical properties of SBDs are characterized by temperature …

In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

The effects of isochronal annealing on the electrical, morphological and structural
characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current …