GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …

We present a detailed study of the MOVPE growth of 800 nm diode laser structures based
on the combination of a GaAsP quantum well with well-established AlGaAs waveguide …

A combination of GalnP waveguide and AIGaAs cladding layers was used for the fabrication
of GaAs-based laser diodes. The replacement of AIGaAs by GalnP in the region of high …

In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at
950 nm and on 810 nm-laser diodes with Al-free GaAsP quantum wells in AlGaAs …

Abstract GaInAsN= GaAsN= AlGaAs double quantum well lasers with an emission at 1.49
mm grown by solid source molecular beam epitaxy is investigated. The devices show the …

cleo paper-zuntu Page 1 High-Brightness, High-Efficiency 940-980nm InGaAs/AlGaAs/GaAs
Broad Waveguide Diode Lasers Zuntu Xu, Wei Gao, Member, IEEE, Lisen Cheng, Al Nelson …

The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser
diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With …

CMA3 Fig. 3 0.81-pm emitting Al-free active-region laser with Al,,,, Ga,,,, As electron harrier
layer:(a) schematic representation;(b) temperature dependence of the thresholdcurrent …

The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

We describe the design and experimental results for high-power, high-efficiency, low
threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free …