Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures
In this study, we have discussed the effect of strain distribution and optical properties on In
0.14 Ga 0.86 As matrix thickness variation (t mat) in self-assembled InAs quantum dot (QD) …
0.14 Ga 0.86 As matrix thickness variation (t mat) in self-assembled InAs quantum dot (QD) …
Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers
This study examines the photoluminescence (PL) properties and strain distribution in
InAs/InGaAs heterostructure for varying number of sub-monolayer (SML) quantum dot stacks …
InAs/InGaAs heterostructure for varying number of sub-monolayer (SML) quantum dot stacks …
Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage
Abstract Strain-coupled multilayer Quantum Dot (QD) structures draw a great attention these
days because of their superior optical and device performance. However, these coupled …
days because of their superior optical and device performance. However, these coupled …
Detecting spatially localized exciton in self-organized InAs/InGaAs quantum dot superlattices: a way to improve the photovoltaic efficiency
M Ezzedini, T Hidouri, MHH Alouane, A Sayari… - Nanoscale research …, 2017 - Springer
This paper reports on experimental and theoretical investigations of atypical temperature-
dependent photoluminescence properties of multi-stacked InAs quantum dots in close …
dependent photoluminescence properties of multi-stacked InAs quantum dots in close …
Microstructural and optical properties dependent on the strain in double-stacked InAs/GaAs quantum dots
MD Kim, SK Noh, CS Kim, TW Kim, SG Kim… - Journal of crystal …, 2005 - Elsevier
The dependence of the size and the strain in the double-stacked InAs/GaAs quantum dot
(QD) was investigated by using the reflection high-energy electron diffraction pattern …
(QD) was investigated by using the reflection high-energy electron diffraction pattern …
The role and growth of strain–reducing layer by molecular-beam epitaxy in a multi–stack InAs/(In, Ga) As sub-monolayer quantum dot heterostructure
The present study focuses on a growth strategy to achieve a uniform (and larger) dot size
distribution in a multi-stack InAs/InGaAs sub-monolayer (SML) quantum dot (QD) …
distribution in a multi-stack InAs/InGaAs sub-monolayer (SML) quantum dot (QD) …
Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors
Strain–induced intermixing in sub–monolayer (SML) quantum dots (QDs) affects primarily
the dot size distribution in an erratic way and also the inter–dot coupling efficiency for carrier …
the dot size distribution in an erratic way and also the inter–dot coupling efficiency for carrier …
Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures
This work systematically investigated the optical and structural properties of multilayer
electronic vertically coupled InAs/GaAs quantum dot (QDs) structures grown by molecular …
electronic vertically coupled InAs/GaAs quantum dot (QDs) structures grown by molecular …
Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam …
Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high
optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we …
optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we …
Investigation of the InAs/GaAs quantum dots' size: dependence on the strain reducing layer's position
This work reports on theoretical and experimental investigation of the impact of InAs
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …