We have studied the capabilities of the growth of quantum well structures in the Ga In
As P material system by metalorganic vapor phase epitaxy (MOVPE) for optical …

In the present work, the quality of hetero-interfaces produced by metalorganic vapor phase
epitaxy (MOVPE) in the InP-based GaInAs/InP system and the GaAs-based GaAs/GaInP …

In this paper the influence of different growth interruption techniques on the interface quality
of GaInAs InP quantum well structures is studied. The structures were grown by …

We report on MOVPE growth of In (GaAs) P/InGaAs multi-quantum-well (MQW) structures.
The growth was carried out at a reactor pressure of 20 hPa in an horizontal lamp heated …

Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by
organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were …

This paper reports on the large area growth of GaInAsP/InP structures for 1.3 and 1.55 μm
applications in a LP-MOVPE system at 20 mbar, at conditions comparable to those used for …

InP/GaInAs/InP quantum‐well structures have been grown using atmospheric pressure
organometallic vapor phase epitaxy (AP‐OMVPE). The effects of growth parameters such as …

InP/GaInAs/InP quantum well structures have been grown using atmospheric pressure
organometallic vapor phase epitaxy (OMVPE). For thin wells the 10 K photoluminescence …

GaInAs/InP single quantum well structures with thicknesses below 5 nm were grown by
metalorganic vapor phase epitaxy at reduced pressure. The sharpness of the …

In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, Al x Ga 1− x
As/GaAs structures (0< x< 0.7) have been grown on 2 inch wafers. X-ray and low …