This paper presents a performance evaluation of GaN X-Band power amplifiers operating as
self-synchronous rectifiers. Two single-stage MMIC power amplifiers are characterized …

The design and measured performance of X-band power amplifier MMICs that utilize 0.15
μm GaN on SiC process technology are presented. Under continuous wave operating …

GaN MMIC power amplifiers for X-band applications are presented delivering more than 16
W of W output power while being extremely small in chip size. With a single-device amplifier …

This paper presents measurement results on supply-modulated X-band 0.15 µm gate width
GaN HEMT MMIC power amplifiers for OFDM signals. Two PAs at 10GHz with 4 and 10W …

This paper reports the design and performance of two new GaN MMIC amplifiers operating
at F-band frequencies. The first design produces 28-29 dBm from 102 to 118 GHz, while the …

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of
the Korrigan project launched by the European Defense Agency. GaN has already …

Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power
Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul …

Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC
technology at Ka-band frequencies are reported in this paper. They have also been …

Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs
are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage …

In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide
state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …