Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

CM Smyth, JM Cain, EJ Lang, P Lu, X Yan… - Journal of Materials …, 2022 - Springer
Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for
low-energy neuromorphic computing. The grain boundary-and point defect-enabled …

Enhancing Resistive Switching Characteristics of MoS2-based Memristor through O2 Plasma Irradiation-Induced Defects

K Varshney, P Shukla, B Prakash… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
In this work, we report the tuning of resistive switching properties in MoS2-based memristors
through varying durations of oxygen plasma exposure. Electrical transport measurements of …

On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors

S Aldana, J Jadwiszczak, H Zhang - Nanoscale, 2023 - pubs.rsc.org
Memristors are prominent passive circuit elements with promising futures for energy-efficient
in-memory processing and revolutionary neuromorphic computation. State-of-the-art …

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

J Jadwiszczak, D Keane, P Maguire, CP Cullen… - ACS …, 2019 - ACS Publications
Two-dimensional (2D) layered semiconductors have recently emerged as attractive building
blocks for next-generation low-power nonvolatile memories. However, challenges remain in …

Schottky barrier reduction on optoelectronic responses in heavy ion irradiated WSe 2 memtransistors

S Zhang, L Xu, S Gao, P Hu, J Liu, J Zeng, Z Li, P Zhai… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenide-based memtransistors provide simulation,
sensing, and storage capabilities for applications in a remotely operated aerospace …

[HTML][HTML] Influence of surface adsorption on MoS2 memtransistor switching kinetics

JM Cain, X Yan, SE Liu, JH Qian, TT Zeng… - Applied Physics …, 2023 - pubs.aip.org
Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS 2)
memtransistors exhibit gate-tunable memristive switching to implement emerging memory …

Radiation resilient two-dimensional electronics

TF Schranghamer, A Pannone… - … Applied Materials & …, 2023 - ACS Publications
Limitations in cloud-based computing have prompted a paradigm shift toward all-in-one
“edge” devices capable of independent data sensing, computing, and storage. Advanced …

Exploring channel length effects in 2D MoS2-Based memtransistors and their Synaptic behavior

MY Esen, WL Ibrahim, M Nacar, A Kayahan… - Materials Science in …, 2024 - Elsevier
Memtransistors, combining the functionalities of memristors and transistors, signify a
substantial advancement with potential applications in areas such as neuromorphic learning …

Manipulation of the electrical and memory properties of MoS 2 field-effect transistors by highly charged ion irradiation

S Sleziona, A Pelella, E Faella, O Kharsah… - Nanoscale …, 2023 - pubs.rsc.org
Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their
transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis …

Displacement damage effects in MoS2-based electronics

K He, Z Li, T Li, Y Sun, S Zhu, C Wu… - Journal of …, 2024 - iopscience.iop.org
Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume, MoS
2-based field-effect transistors (FETs) are regarded as optimal components for radiation …