Effect of hydrogen in size-limited growth of graphene by atmospheric pressure chemical vapor deposition

H Zhang, Y Zhang, B Wang, Z Chen, Y Sui… - Journal of Electronic …, 2015 - Springer
Analysis of graphene domain synthesis explains the main graphene growth process. Size-
limited graphene growth caused by hydrogen is studied to achieve efficient graphene …

Effects of hydrogen partial pressure in the annealing process on graphene growth

DH Jung, C Kang, M Kim, H Cheong… - The Journal of …, 2014 - ACS Publications
Graphene domains with different sizes and densities were successfully grown on Cu foils
with use of a chemical vapor deposition method. We investigated the effects of volume ratios …

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

L Liu, H Zhou, R Cheng, Y Chen, YC Lin… - Journal of materials …, 2012 - pubs.rsc.org
Graphene has attracted considerable interest as a potential material for future electronics.
Although mechanical peel is known to produce high quality graphene flakes, practical …

Atmospheric pressure chemical vapor deposition of graphene using a liquid benzene precursor

C Kang, DH Jung, JS Lee - Journal of nanoscience and …, 2015 - ingentaconnect.com
Graphene has attracted great attention owing to its unique structural and electrical
properties. Among various synthetic approaches of the graphene, metal assisted chemical …

Etching effect of hydrogen and oxygen on the chemical vapor deposition graphene on Cu

X Gao, R Xiao, Y Zhang, Z Chen, H Kang, S Wang… - Thin Solid Films, 2022 - Elsevier
Hydrogen and oxygen are the most commonly used gasses in the growth of chemical vapor
deposition (CVD) graphene, which are very important for the growth of CVD graphene. In …

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating

H Zhang, Y Zhang, Y Zhang, Z Chen, Y Sui… - Physical Chemistry …, 2016 - pubs.rsc.org
Oxygen can passivate Cu surface active sites when graphene nucleates. Thus, the
nucleation density is decreased. The CuO/Cu substrate was chosen for graphene domain …

Pressure-controlled chemical vapor deposition of single-layer graphene with millimeter-size domains on thin copper film

B Huet, JP Raskin - Chemistry of Materials, 2017 - ACS Publications
In this work, single-layer graphene with compact millimeter-size domains has been obtained
by chemical vapor deposition (CVD) on thin Cu film. This has been achieved by carefully …

[HTML][HTML] A simple method to tune graphene growth between monolayer and bilayer

X Xu, C Lin, R Fu, S Wang, R Pan, G Chen, Q Shen… - Aip Advances, 2016 - pubs.aip.org
Selective growth of either monolayer or bilayer graphene is of great importance. We
developed a method to readily tune large area graphene growth from complete monolayer …

Hydrogen kinetics on scalable graphene growth by atmospheric pressure chemical vapor deposition with acetylene

M Qi, Z Ren, Y Jiao, Y Zhou, X Xu, W Li… - The Journal of …, 2013 - ACS Publications
Acetylene (C2H2) and copper foil have been chosen as carbon precursor and catalyst,
respectively, for the synthesis of graphene by atmospheric pressure chemical vapor …

Relation between growth rate and structure of graphene grown in a 4 ″showerhead chemical vapor deposition reactor

B Bekdüz, Y Beckmann, J Meier, J Rest… - …, 2017 - iopscience.iop.org
The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a
complex interplay of substrate preparation, substrate temperature, pressure and flow of …