Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices
EE Wagner, G Horn, GB Stringfellow - Journal of Electronic Materials, 1981 - Springer
Optimum conditions are reported for the growth of high-quality Al x Ga 1_x As by means of
vapor phase epitaxy from organometallic compounds (OMVPE). Typical values of mobili-ty …
vapor phase epitaxy from organometallic compounds (OMVPE). Typical values of mobili-ty …
Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
TF Kuech, DJ Wolford, E Veuhoff, V Deline… - Journal of applied …, 1987 - pubs.aip.org
The metalorganic vapor‐phase epitaxy (MOVPE) of Al x Ga1− x As most commonly employs
the methyl precursors Al (CH3) 3 and Ga (CH3) 3. These precursors were used in the growth …
the methyl precursors Al (CH3) 3 and Ga (CH3) 3. These precursors were used in the growth …
Growth of AlxGa1− xAs by MOVPE using a new alkylaluminium precursor
AC Jones, PR Jacobs, S Rushworth, JS Roberts… - Journal of crystal …, 1989 - Elsevier
Abstract Epitaxial Al x Ga 1-x As has been grown using tertiarybutyldimethylaluminium (Bu t
AlMe 2) 2 as an alternative to Me 3 Al. The grown layers are of good optical quality although …
AlMe 2) 2 as an alternative to Me 3 Al. The grown layers are of good optical quality although …
Photoluminescence on high‐quality AlxGa1−xAs grown by metalorganic vapor‐phase epitaxy using alane bis(dimethylethylamine)
SM Olsthoorn, F Driessen, LJ Giling, DM Frigo… - Applied physics …, 1992 - pubs.aip.org
Photoluminescence (PL) spectra are reported of initial results of Al x Ga1− x As grown by
metalorganic vapor‐phase epitaxy (MOVPE), using a new precursor, alane bis …
metalorganic vapor‐phase epitaxy (MOVPE), using a new precursor, alane bis …
Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Room‐temperature Ga (1− x) Al x As‐GaAs DH lasers with very low threshold current
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers
MB Panish, S Sumski, I Hayashi - Metallurgical Transactions, 1971 - Springer
The concept that multilayer structures containing several heterojunctions may be used as
low threshold lasers has led to the development of techniques for the preparation of such …
low threshold lasers has led to the development of techniques for the preparation of such …
CW operation of AlxGa1−xAs/AlyGa1−yAs lasers grown by metalorganic cvd in wavelength range 760~780 nm
Y Mori, N Watanabe - Electronics Letters, 1980 - IET
Room-temperature cw operation of Al x Ga1− x As/Al y Ga1− y As dh structure visible (760~
780 nm) lasers grown by metalorganic cvd has been achieved. The planar structure lasers …
780 nm) lasers grown by metalorganic cvd has been achieved. The planar structure lasers …
High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor
WS Hobson, TD Harris, CR Abernathy… - Applied physics …, 1991 - pubs.aip.org
High quality Al x Ga1− x As has been grown by low‐pressure (30 Torr) organometallic vapor
phase epitaxy (OMVPE) using a novel precursor, trimethylamine alane (TMAAl), as the …
phase epitaxy (OMVPE) using a novel precursor, trimethylamine alane (TMAAl), as the …
Performance and characterization of GaAs‐(GaAl) As double heterojunction lasers grown by metalorganic chemical vapor deposition
JEA Whiteaway, EJ Thrush - Journal of Applied Physics, 1981 - pubs.aip.org
Until recently liquid phase epitaxy (LPE) was the only way of growing the high-quality (GaAl)
As required by devices incorporating heterojunctions such as injection lasers and …
As required by devices incorporating heterojunctions such as injection lasers and …
Atomic layer epitaxy of AlAs and AlGaAs
T Meguro, S Iwai, Y Aoyagi, K Ozaki, Y Yamamoto… - Journal of crystal …, 1990 - Elsevier
Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy
(MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum …
(MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum …