Preparation and Optical Properties of InAs1− xPx Alloys
AG Thompson, JE Rowe, M Rubenstein - Journal of Applied Physics, 1969 - pubs.aip.org
Homogeneous PoJycrystalline lnAsl_zP", alloys have been prepared by a halogen vapor-
transport cIosedtube technique over the entire range of composition. Electroreflectance …
transport cIosedtube technique over the entire range of composition. Electroreflectance …
Electroreflectance studies of InAs, GaAs, and (Ga, in) as alloys
EW Williams, V Rehn - Physical Review, 1968 - APS
The technique of electroreflectance was applied to the study of epitaxial (Ga, In) As alloys.
Two experimental methods were used and their relative merits are discussed. The Γ 15− Γ 1 …
Two experimental methods were used and their relative merits are discussed. The Γ 15− Γ 1 …
ELECTROREFLECTANCE MEASUREMENTS ON GaxIn1−xAs ALLOYS
AG Thompson, JC Woolley - Canadian Journal of Physics, 1967 - cdnsciencepub.com
The electrorellectance of GaAs, InAs, and the Ga x In1− x As alloys has been measured
between 2 and 6 eV at room temperature. The E 1, E 0′, and E 2 transitions and their …
between 2 and 6 eV at room temperature. The E 1, E 0′, and E 2 transitions and their …
Electroreflectance measurements in mixed III–V alloys
SS Vishnubhatla, B Eyglunent… - Canadian Journal of …, 1969 - cdnsciencepub.com
Electroreflectance measurements by the electrolyte technique have been made on alloys of
the InAs x Sb1− x, InAs1− x P x, and Ga x In1− x Sb systems and the variation of the values …
the InAs x Sb1− x, InAs1− x P x, and Ga x In1− x Sb systems and the variation of the values …
[引用][C] Electroreflectance spectrum of inas in the range of E0 and E0 + δ0 transitions
F Lukeš - physica status solidi (b), 1977 - Wiley Online Library
The electroreflectance (ER) spectrum of InAs has neither been successfully measured nor
interpreted within the energy range of E and E+ A transitions to date. The first serious …
interpreted within the energy range of E and E+ A transitions to date. The first serious …
Bandgap energy of InGaAsP quaternary alloy
Y Yamazoe, T Nishino, Y Hamakawa… - Japanese Journal of …, 1980 - iopscience.iop.org
The bandgap energy of InGaAsP quaternary alloy lattice-matched to InP has been precisely
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …
Electroreflectance of In0.79Ga0.21As0.54P0.46
T Nishino, Y Yamazoe, Y Hamakawa - Applied Physics Letters, 1978 - pubs.aip.org
We have measured Schottky‐barrier electroreflectance spectra of an In0. 79Ga0. 21As0.
54P0. 46 LPE layer at 81 K. Analysis of the spectra has enabled us to determine the …
54P0. 46 LPE layer at 81 K. Analysis of the spectra has enabled us to determine the …
Optical energy-gap variation in InAs–InSb alloys
JC Woolley, J Warner - Canadian Journal of Physics, 1964 - cdnsciencepub.com
Homogeneous samples of InAs–InSb alloys have been produced by very slow directional
freezing and zone recrystallization methods, and used for the determination of values of the …
freezing and zone recrystallization methods, and used for the determination of values of the …
Optical absorption and refractive index near the band gap for InGaAsP
W Kowalsky, HH Wehmann, F Fiedler… - Phys. Status Solidi A; …, 1983 - osti.gov
The optical absorption coefficient.. cap alpha.. and the refractive index n were measured for
a quaternary alloy with band gap-equivalent wavelength of 1.17.. mu.. m and for the ternary …
a quaternary alloy with band gap-equivalent wavelength of 1.17.. mu.. m and for the ternary …
[引用][C] Absorption edge of InPxAs1−x mixed crystals
IV Bodnar, AI Lukomskii… - physica status solidi (a), 1976 - Wiley Online Library
The 111-V ternary alloy system InP AS^-^ with band gap variation ranging from 0.4 to 1.4 eV
is very promising and has found commercial application. At the same time this system is …
is very promising and has found commercial application. At the same time this system is …