Optical orientation of carrier spins has been studied in pure direct‐gap AlxGa1–xAs alloys (x
up to 15%). It is shown that optical excitation with circularly‐polarized light with quanta …

An anomalous reversal of the direction of exciton spin polarization is found in an optical-
orientation study of Al x Ga 1− x As alloys. A negative degree of circular polarization of …

The photoluminescence of intrinsic excitons in high purity Al x Ga 1− x As layers is studied
under interband excitation by circularly polarized light. To determine the nature of excitons …

Full-zone optical spin injection in Al x Ga 1− x As alloys is investigated by analyzing the
degree of circular polarization (DCP) of luminescence in a quantum well architecture …

We analyze the operation of a spin‐polarized electron source, consisting of a 100 Å GaAs
cap on top of Al0. 3Ga0. 7As, excited at 300 or 120 K by a He‐Ne laser. The cap allows easy …

GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …

The impact of inter-valley scattering in modifying the density of optically injected spin
polarized electrons in Al x Ga 1− x As/GaAs heterostructure is investigated. Polarization …

The polarization of photoemitted electrons from thin Al x Ga1− x As layers grown by
molecular‐beam epitaxy has been studied as a function of Al concentration by varying x in …

The influence of the valence band structure on the optical properties of quantum wells with a
parabolic potential, consisting of Al x Ga 1− x As and In 1− x Ga x As y P 1− y alloys, is …

We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for
excitation in the growth direction and for in-plane excitation. Time-and polarization-resolved …