We present 4-terminal (4-T) silicon (Si) nanoelectron-mechanical (NEM) relays fabricated on
silicon-on-insulator (SOI) wafers. We demonstrate true 4-T switching behavior with isolated …

Integrated nanoelectromechanical (NEM) relays can be used instead of transistors to
implement ultra-low power logic circuits, due to their abrupt turn off characteristics and zero …

This manuscript focuses on Nano-Electro-Mechanical (NEM) relays with electrostatic
actuation for advanced logic and memory applications. The use of Nano-Electro-Mechanical …

Nanoelectromechanical (NEM) relays show promise in a wide variety of low power
applications. NEM relays have near-zero leakage current, in contrast to the relatively high …

The need for more energy-efficient solid-state switches beyond complementary metal-oxide-
semiconductor (CMOS) transistors has become a major concern as the power consumption …

We demonstrate the use of torsion in nanorelays to achieve low voltages, high speeds,
single lithography step construction, and a form useful for configurability and electronic …

This paper demonstrates electrical results of an integrated Si CMOS-electrostatically
actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing …

Laterally actuated polycrystalline silicon nanoelectromechanical (NEM) relays with
enhanced electrical properties are presented. Due to surface oxidation of polysilicon in room …

NEM relay-based circuits can operate in harsh environmental conditions, high temperatures
and high levels of radiation, without consuming energy in standby mode. These attributes …

Electrostatically actuated nanoelectromechanical (NEM) relays are integrated with silicon
nMOS devices. An nMOSFET successfully drives a NEM relay with the MOSFET serving as a …